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BS EN 62373:2006

Current

Current

The latest, up-to-date edition.

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

29-09-2006

INTRODUCTION
1 Scope
2 Terms and definitions
3 Test equipment
  3.1 Equipment
  3.2 Requirement for handling
4 Test sample
  4.1 Sample
  4.2 Packaging
  4.3 ESD protection circuit
5 Procedure
  5.1 Initial measurement and read point measurement
  5.2 Test
  5.3 Notes for field MOSFET
  5.4 Judgment
Annex A (informative) Wafer level reliability test (WLR test)
Bibliography
Figures

Defines a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect transistors (MOSFET).

Committee
EPL/47
DevelopmentNote
Supersedes 04/30113801 DC (10/2006)
DocumentType
Standard
Pages
16
PublisherName
British Standards Institution
Status
Current
Supersedes

Provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect transistors (MOSFET)

Standards Relationship
NF EN 62373 : 2006 Identical
I.S. EN 62373:2006 Identical
NBN EN 62373 : 2007 Identical
DIN EN 62373:2007-01 Identical
EN 62373 : 2006 Identical
SN EN 62373 : 2006 Identical
IEC 62373:2006 Identical
EN 50289-3-7 : 2001 Identical

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